Wellenlängenabhängige Untersuchungen mit der Kelvin-Sonde
- Das
- The established Kelvin-Method that has not changed essentially since Lord Kelvin (1898) and W. A. Zisman (1932) is implemented in this thesis in a new way. With the aid of the Kelvin-Probe, semiconductors and organic based photovoltaics were analysed under the incidence of light. Monochromatic light is beamed on the surface of p- and n-doped silicon. If the energy of the incident light is greater than the band gap between valence and conduction band, electron-hole pairs will be generated. The minority charge carriers move in the direction of the sur-face and recombine with the surface charges. The reduction of the band bending generated by this process changes the contact potential difference between sample and probe. The change of the contact potential difference which depends on the wavelength can be eva-luated with the Kelvin-Probe. If light is cast upon the organic based photovoltaics C60/ZnPc and C60/ZnPc:C60 , excitons will be generated at the donor
Author: | Samuel Fitz |
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Advisor: | Wieland Zahn, A.-D. Müller |
Document Type: | Bachelor Thesis |
Language: | German |
Name: | Anfatec Instruments AG Melanchthonstr. 28, 08606 Oelsnitz (V) |
Date of Publication (online): | 2010/09/06 |
Year of first Publication: | 2010 |
Publishing Institution: | Westsächsische Hochschule Zwickau |
Date of final exam: | 2010/07/23 |
Tag: | Kontaktpotentialdifferenz |
GND Keyword: | Kelvin-Sonde; Organische Solarzelle; Silicium |
Page Number: | 33 Seiten, - Abb., - Tab., 19 Lit. |
Faculty: | Westsächsische Hochschule Zwickau / Physikalische Technik, Informatik |
Release Date: | 2010/09/06 |