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Optimierung der Prozessstabilität für die Herstellung von nanoskaligen Strukturen durch Laserinterferenzlithographie

optimization of the process stability for the fabrication of nanoscale structures by using laser interference lithography

  • Gegenstand der Arbeit ist es, die Prozessstabilität für die Herstellung von nanoskaligen Strukturen durch Laserinterferenztlithographie zu optimieren und die Möglichkeit des Einbringens dieser Strukturen in eine OLED zu untersuchen. Dabei steht die Optimierung der Strukturen im Vordergrund dieser Arbeit. Zur Optimierung der nanoskaligen Strukturen wurde ein Doppelbelichtungsverfahren nach O
  • Aim of this thesis is the optimization of the process stability for the fabrication of nanoscale structures by using laser interference lithography as well studying the possibility of the integration of these structures into an OLED. The optimization of these structures was the priority of this work. To optimize the nanoscale structure, a double-exposure method was used which was firstly introduced by O'Reilly and Smith. This method describes a possibility to experimentally determine how the linewidth in interference lithography varies in connection with characteristics of the exposure. Here, a simple, binary model of photoresist behavior is used which assumes that the resistor has some clipping dose, D0. When the dose, at any point in the resistor, exceeds the clipping dose, the resistor changes from completely unexposed to completely exposed. Therefore, Moire pattern were fabricated. Furthermore, a contrast value was determined to evaluate the compatibility of the used photoresist with the laser interference setup. These values can be used to calculate the necessary parameter for the achievement of defined nanoscale structures. A clipping dose of D_0=8,43 ±0,33 mJ⁄cm² and a contrast value of C=0,73±0,08 were calculated for the positive photoresist AZ MIR701. For the negative photoresist AR-N 4400-05 a clipping dose of D_0=8,43 ±0,33 mJ⁄cm² and a contrast value of C=0,83±0,07 were calculated. In addition to this structuring, a lithographic fabricated nanoscale structure was integrated into an OLED which was self-produced. The functionality of the OLED was still proofed, although there was an additional treatment by the lithographic process.

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Author:Dominik Weber
Advisor:Daniel SchondelmaierGND, Jürgen Grimm
Document Type:Master's Thesis
Language:German
Name:Westsächsische Hochschule Zwickau, Fakultät Physikalische Technik/Informatik, AG Nanotechnologie
Dr.-Friedrichs-Ring 2A, 08056 Zwickau
Date of Publication (online):2018/02/22
Year of first Publication:2017
Publishing Institution:Westsächsische Hochschule Zwickau
Date of final exam:2017/12/20
Tag:Laserinterferenzlithografie; Lloyd-Spiegel-Interferometer; Nanotechnologie; Photolack
GND Keyword:Lithografie; OLED; Organisches Halbleiterbauelement; Laser; Interferenz
Page Number:90 Seiten, 43 Abb., 6 Tab., 38 Lit.
Faculty:Westsächsische Hochschule Zwickau / Physikalische Technik, Informatik
Release Date:2018/02/22