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The birefringence of single crystal diamonds is quantified using a birefringence measurement setup and a Matlab program for the calculation. The theoretical backgrounds of the polarization of light and polarization changing equipment is used for selecting a plane polariscope measurement method. Here, a birefringent sample is placed between two optical polarizers. The equipment, as well as its theoretical and practical behavior in the measurement setup is discussed. The equations for birefringence measurements are given and a practical Matlab program is introduced to simplify the birefringence calculation for the user. Possible influences on the birefringence value due to inaccuracies of the laser, the polarizers, the diamond sample, the magnification lenses and the camera are discussed and taken into account. Intensity fluctuations and polarization changes of the laser beam are studied. The direction of the transmission axis of the polarizer and the analyzer is examined. A retarder is inserted into the measurement setup to check the accuracy of the birefringence measurement since a retarder has a known phase retardation. This retarder measurement should qualify the measurement setup to quantify birefringence of the diamond sample. The measurement results show that intensity fluctuations of the laser and the handling inaccurracies of the polarizers have a major influence on the accurracy of the birefringence measurement. This measurement setup is not qualitfied to measure birefringence accurate yet. Steps to improve the measurement setup and the birefringence calculation are discussed.
Der Inhalt dieser Bachelorarbeit ist die Charakterisierung von Siliziumwaferoberflächen nach nasschemischer Textur oder Politur. Die Passivierung von HJT - Solarzellen durch die Abscheidung von a - Si:H wird auf den nasschemisch behandelten Wafern untersucht. Stand der Technik sind HJT - Solarzellen mit einer beidseitigen Textur der Wafer. Rasterelektronenmikroskopieaufnahmen, Reflexions - und Rauheitsmessung dienen der Charakterisierung der Waferoberflächen. Photolumineszenzbilder und Lebensdauermessungen zeigen einen Einfluss der Passivierung auf die Lebensdauer von Ladungsträgern. Die theoretischen Erwartungen konnten in dieser Arbeit nicht für alle Gruppen bestätigt werden, was weitere Experimente erfordert.