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Ferroelectric doped hafnium oxide might be able to revive the ferroelectric memory as a candidate for future non-volatile memories. Recent publications have reported ferroelectricity in HfO2 films deposited via physical vapor deposition (PVD) and thermal atomic layer deposition (ALD). Within this thesis, such layers have been fabricated by a plasma enhanced ALD process for the first time. Using an O2 remote plasma to oxidize TEMAHf and TMAl, respectively, Al:HfO2 stacks with different compositions have been deposited. Sputter deposited TiN was used as bottom and top electrode to form metal-insulator-metal capacitors. Compared to the PVD or thermal ALD films reported in literature, the plasma enhanced ALD films exhibited one to two orders higher leakage current at 1 V. The root of this higher leakage are oxygen vacancies as well as carbon and nitrogen impurities in the range of several at%. Despite the consequential perturbing effects, the main trends reported earlier are discernable. Just these perturbing effects turn out to substantiate the current explanation of a ferroelectric phase as route source for the observed electrical behavior.